High Power MOSFET FDC8886 N-Channel Power Trench® MOSFET, 30 V, 6.5 A, 23 mΩ

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Sunbeam Electronics (Hong Kong) Limited

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High Power MOSFET FDC8886 N-Channel Power Trench® MOSFET, 30 V, 6.5 A, 23 mΩ

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High Power MOSFET FDC8886 N-Channel Power Trench® MOSFET, 30 V, 6.5 A, 23 mΩ

High Power MOSFET FDC8886 N-Channel Power Trench® MOSFET, 30 V, 6.5 A, 23 mΩ [Who we are?] Sunbeam Electronics (Hong Kong) Co. Ltd is focus on semi-conductors sourcing and electronic components sale ...

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